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Search Results for "SI7106DN-T1-E3"

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Vishay(Siliconix)

20V 12.5A N-CH MOSFET 6.2mR Rds On, Surface Mount

Volume Production

Continuous Drain Current (ID): 12.5A

Drain to Source Resistance: 6.2mR

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 6.2mR

Vishay(Siliconix)

N-CH MOSFET 20V 14A 4.9mR Surface Mount

Volume Production

Continuous Drain Current (ID): 14A

Drain to Source Resistance: 4.9mR

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 4.9mR

Vishay(Siliconix)

N-CH MOSFET 40V 10.5A 7.8mR TrenchFET PowerPAK

SMALL OUTLINE, S-XDSO-C5

Active

Continuous Drain Current (ID): 10.5A

Drain to Source Resistance: 7.8mR

Drain to Source Voltage (Vdss): 40V

Drain-source On Resistance-Max: 7.8mR

Vishay(Siliconix)

P-CH MOSFET 20V 9.8A 10.8mR Surface Mount

Obsolete

Continuous Drain Current (ID): 9.8A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 10.8mR

Drain to Source Voltage (Vdss): -20V

SI7107DN-T1-E3/BKN

Vishay(Siliconix)

P-CHANNEL 20-V (D-S) MOSFET

Volume Production

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 20mR

Fall Time: 240ns

Gate to Source Voltage (Vgs): 8V

Vishay(Intertechnologies)

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

,

Obsolete

Continuous Drain Current (ID): 9.2A

Drain to Source Resistance: 11mR

Drain to Source Voltage (Vdss): 30V

Fall Time: 12ns

Obsolete - Use SI7806ADN-T1-E3

Obsolete

RoHS Compliant: No