P-channel MOSFET with 20V drain-source breakdown voltage and 9.8A continuous drain current. Features low 10.6mΩ maximum drain-source on-resistance and 1.5W power dissipation. Operates from -55°C to 150°C, with typical turn-on delay of 27ns and fall time of 55ns. Surface mountable in a 1212-8 package, this RoHS compliant component is supplied on tape and reel.
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| Continuous Drain Current (ID) | 9.8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 10.8mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 10.6mR |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.042inch |
| Lead Free | Lead Free |
| Length | 0.124inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 10.8mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 270ns |
| Turn-On Delay Time | 27ns |
| Width | 0.124inch |
| RoHS | Compliant |
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