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SIA440DJ-T1-GE3

Vishay(Intertechnologies)

40V 12A N-Channel MOSFET, 26mR Rds(on), SC-70-6L

SMALL OUTLINE, S-PDSO-N3

Active

Continuous Drain Current (ID): 12A

Drain to Source Resistance: 26mR

Drain to Source Voltage (Vdss): 40V

Fall Time: 5ns

SIA449DJ-T1-GE3

Vishay(Siliconix)

P-Channel TrenchFET MOSFET 30V 12A 20mR 19W Surface Mount

Volume Production

Continuous Drain Current (ID): 12A

Drain to Source Resistance: 20mR

Drain to Source Voltage (Vdss): 30V

Fall Time: 16ns

SIA443DJ-T1-GE3

Vishay(Siliconix)

P-CH MOSFET 20V 6.7A 45mR SC

End of Life

Package/Case: SC

Continuous Drain Current (ID): 6.7A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 45mR

SIA450DJ-T1-GE3

Vishay(Siliconix)

N-CHANNEL TrenchFET MOSFET 20V 1.52A 15W Surface Mount

Obsolete

Continuous Drain Current (ID): 1.52A

Drain to Source Breakdown Voltage: 240V

Drain to Source Resistance: 2.95R

Drain to Source Voltage (Vdss): 240V

SIAA40DJ-T1-GE3

Vishay(Intertechnologies)

Power Field-Effect Transistor,

SMALL OUTLINE, S-PDSO-N3

Active

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: DUAL

Number of Elements: 1