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Search Results for "SIA447DJ-T1-GE3"

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SIA447DJ-T1-GE3

Vishay(Siliconix)

P-Channel MOSFET, -12V, 12A, 13.5mR, SMT

Volume Production

Continuous Drain Current (ID): 12A

Drain to Source Resistance: 13.5mR

Drain to Source Voltage (Vdss): -12V

Fall Time: 50ns

SIA448DJ-T1-GE3

Vishay(Siliconix)

N-Channel MOSFET, 20V, 12A, 15mR Rds On, Surface Mount

Volume Production

Continuous Drain Current (ID): 12A

Drain to Source Resistance: 15mR

Drain to Source Voltage (Vdss): 20V

Gate to Source Voltage (Vgs): 8V

SIA449DJ-T1-GE3

Vishay(Siliconix)

P-Channel TrenchFET MOSFET 30V 12A 20mR 19W Surface Mount

Volume Production

Continuous Drain Current (ID): 12A

Drain to Source Resistance: 20mR

Drain to Source Voltage (Vdss): 30V

Fall Time: 16ns

SIA417DJ-T1-GE3

Vishay(Siliconix)

P-CH MOSFET 8V 12A 3.5W 23mR SC

Obsolete

Package/Case: SC

Continuous Drain Current (ID): 12A

Drain to Source Breakdown Voltage: 8V

Drain to Source Resistance: 23mR

SIA443DJ-T1-GE3

Vishay(Siliconix)

P-CH MOSFET 20V 6.7A 45mR SC

End of Life

Package/Case: SC

Continuous Drain Current (ID): 6.7A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 45mR