P-channel MOSFET transistor featuring a continuous drain current of 12A and a drain-to-source voltage of -12V. Offers a low on-resistance of 13.5mΩ at a gate-to-source voltage of -4.5V. Operates with a threshold voltage of -400mV and a maximum power dissipation of 19W. This surface-mount component is packaged in a tape and reel for efficient assembly.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA447DJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 2.88nF |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 13.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 60ns |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA447DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA447DJ-T1-GE3 to view detailed technical specifications.
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