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Search Results for "SIE830DF-T1-E3"

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Vishay(Siliconix)

MOSFET N-CH 30V 50A 10-POLARPAK

Obsolete

Continuous Drain Current (ID): 27A

Drain to Source Resistance: 4.2mR

Drain to Source Voltage (Vdss): 30V

Fall Time: 95ns

Vishay(Siliconix)

Obsolete - Use SIE860DF-T1-GE3

Volume Production

Continuous Drain Current (ID): 35A

Drain to Source Resistance: 2.5mR

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 12V

Vishay(Siliconix)

N-CH MOSFET 40V 23.6A 5.5mR Surface Mount

Volume Production

Continuous Drain Current (ID): 23.6A

Drain to Source Resistance: 5.5mR

Drain to Source Voltage (Vdss): 40V

Drain-source On Resistance-Max: 5.5mR

Vishay(Siliconix)

N-channel 30-V (d-s) Mosfet

Obsolete

Continuous Drain Current (ID): 38A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 2.1mR

Drain to Source Voltage (Vdss): 30V

Vishay(Siliconix)

Mosfet N-ch 200V 18.3A Polarpak

Obsolete

Continuous Drain Current (ID): 4.1A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 130mR

Drain to Source Voltage (Vdss): 200V