Datalogging & Acquisition NI LABVIEW TEK ED. FULL VERSION SFWR
LIMIT SWITCH SZL-WL
Rectifier Diode, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon,
Rectifier Diode, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon,
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE-3
Inductor Power Shielded Wirewound 3.3uH 20% 100KHz 1.7A 120mOhm DCR 1212 Embossed Carrier T/R
Inductor Power Shielded Wirewound 1.5uH 30% 100KHz 3.6A 20mOhm DCR T/R
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, 2.86 X 2.82 MM, DIE-2
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, 3.92 X 3.88 MM, DIE-2
Poster; Warning; Black on Yellow; English; 17 x 22 In.; 5 per Box
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, DIE-3
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, 2.60 X 2.60 MM, DIE-2
Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, 4.04 X 4.00, DIE-2
Sealed Choke Coil
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, 9.13 X 9.15 MM, DIE
Insulated Gate Bipolar Transistor, 50A I(C), 1700V V(BR)CES, N-Channel, 8.23 X 8.25 MM, DIE
FILTER UNIT, 80MM - More Details
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, 2.60 X 2.60 MM, DIE-2
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, 9.73 X 10.23 MM, DIE-10
Insulated Gate Bipolar Transistor, 2A I(C), 600V V(BR)CES, N-Channel, 1.78 X 1.78 MM, DIE-2
