SKM300GB17E4 - Electronic Components Search

Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor, 422A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7

FLANGE MOUNT, R-XUFM-X5

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Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 1.85V

Collector Emitter Voltage (VCEO): 1.2kV

Insulated Gate Bipolar Transistor,

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Package/Case: Module

Polarity: NPN

RoHS Compliant: Yes

SKM400GB17E410-032-0

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SKM300GB12E408069-

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