Transistor, Igbt; D-58; Igbt; 1200 V, 570 A; 1200 V; 570 A; 1200 V
IGBT MODULE, 1.2KV, 400A, SEMITRANS 3; Transistor Polarity:N Channel; DC Collector Current:400A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:5 ;RoHS Compliant: Yes
SEMITRANS LOW LOSS IGBT MODULES; Transistor Type: IGBT ; RoHS Compliant: Yes
Insulated Gate Bipolar Transistor, 565A I(C), 1200V V(BR)CES, N-Channel
SEMIKRON power module
