Insulated Gate Bipolar Transistor, 422A I(C), 1200V V(BR)CES, N-Channel, CASE D59, SEMITRANS-7
IGBT, MODULE, 1.2KV, 913A; Transistor Polarity:NPN; DC Collector Current:913A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:5; Packaging:Each ;RoHS Compliant: Yes
SKM600GA12E409008-
