Search Results for "SPI1306-470M"

Inductor Power Wirewound 22uH 20% 100KHz Ferrite 3.8A 0.04Ohm DCR T/R

Inductor Power Wirewound 68uH 20% 100KHz Ferrite 2.4A 0.12Ohm DCR T/R

Power Field-Effect Transistor, 10.3A I(D), 100V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN

600V 15A N-Channel MOSFET, 280mR Rds(on), TO-262

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

Trans MOSFET N-CH 100V 10.3A 3-Pin(3+Tab) TO-262 Tube

500V N-Channel MOSFET, 11.6A, 380mR, TO-262

Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

POWER SUPPLY,SWITCHING,ATX,1K WATT,ATX/EPS12V,PFC,SLI RDY,(4)12VDC@20A,6+2PCIE

650V 15A N-Channel MOSFET TO-262-3 280mR Rds(on)

Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

Inductor Power Wirewound 47uH 20% 100KHz 1.6A 0.14Ohm DCR T/R

Trans MOSFET N-CH 100V 10.3A 3-Pin(3+Tab) TO-262 Tube

SPI Demo Board

600V 13.4A N-Channel MOSFET TO-262-3

Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, 3 PIN

Inductor RF Chip Unshielded Wirewound 0.047uH 20% 50MHz 42Q-Factor Phenolic 0.82A 0.145Ohm DCR T/R

47nH Unshielded Radial Inductor, 360mA, 120mR DCR, 250MHz SRF