Dual N-channel/P-channel enhancement mode power MOSFET, 40V drain-source voltage, 5A continuous drain current for N-channel and 4A for P-channel. Features 35mOhm at 10V for N-channel and 45mOhm at 10V for P-channel drain-source resistance. Housed in an 8-pin SO package with gull-wing leads for surface mounting, this plastic encapsulated component offers a maximum power dissipation of 2000mW and operates from -55°C to 150°C.
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Etronic Team SSM8450 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SO |
| Package Description | Small Outline IC |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.98(Max) |
| Package Width (mm) | 3.99(Max) |
| Package Height (mm) | 1.75(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±22V |
| Maximum Continuous Drain Current | 5@N Channel|4@P ChannelA |
| Maximum Drain Source Resistance | 35@10V@N Channel|45@10V@P ChannelmOhm |
| Typical Gate Charge @ Vgs | 18@10V|[email protected]@N Channel|20@10V|[email protected]@P ChannelnC |
| Typical Gate Charge @ 10V | 18@N Channel|20@P ChannelnC |
| Typical Input Capacitance @ Vds | 908@10V@N Channel|1130@10V@P ChannelpF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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