PackageDIP
MountingThrough Hole
Power130mW
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Technical Specifications
Everlight ITR20004 technical specifications.
General
Package/Case
DIP
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
20us
Forward Current
50mA
Max Collector Current
50mA
Max Operating Temperature
85°C
Min Operating Temperature
-25°C
Mount
Through Hole
Number of Elements
1
Output Type
Phototransistor
Package Quantity
100
Packaging
Bulk
Power Dissipation
130mW
Radiation Hardening
No
Response Time
15us
Reverse Breakdown Voltage
5V
Reverse Voltage
5V
RoHS Compliant
No
Wavelength
940nm
Compliance
RoHS
Not CompliantNo
Datasheet
Everlight ITR20004 Datasheet
Download the complete datasheet for Everlight ITR20004 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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