N-channel enhancement-mode MOSFET provides a 60 V drain-source rating in a compact SOT-23 surface-mount package. The device supports 115 mA continuous drain current and 800 mA pulsed drain current with ±20 V gate-source voltage capability. Low on-resistance, low gate threshold voltage, low input capacitance, and fast switching characteristics support small-signal switching applications. The package is marked 7K and the device is specified as Pb-free and RoHS compliant.
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| Transistor Type | N-channel enhancement-mode MOSFET |
| Drain-Source Voltage | 60V |
| Drain-Gate Voltage | 60 at RGS ≤ 1.0 MΩV |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 115mA |
| Pulsed Drain Current | 800mA |
| Operating Junction Temperature | -55 to +150°C |
| Storage Temperature | -55 to +150°C |
| Total Device Dissipation | 350mW |
| Thermal Resistance Junction-to-Ambient | 350°C/W |
| Drain-Source Breakdown Voltage | 60 min at VGS=0 V, ID=10 µAV |
| Zero Gate Voltage Drain Current | 1.0 max at VDS=60 V, VGS=0 VµA |
| Gate-Body Leakage | ±10 max at VGS=±20 V, VDS=0 VµA |
| Gate Threshold Voltage | 1.0 min, 2.5 max at VDS=VGS, ID=250 µAV |
| Static Drain-Source On-Resistance | 2 max at VGS=10 V, ID=0.5 AΩ |
| Static Drain-Source On-Resistance | 4 max at VGS=4.5 V, ID=200 mAΩ |
| On-State Drain Current | 1.5 min at VGS=10 V, VDS=7.5 VA |
| Forward Transconductance | 200 min at VDS=10 V, ID=0.2 AmS |
| Input Capacitance | 50 maxpF |
| Output Capacitance | 15 maxpF |
| Reverse Transfer Capacitance | 6 maxpF |
| Turn-On Delay Time | 5 maxns |
| Turn-Off Delay Time | 30 maxns |
| ESD HBM | 2000 typical 3000 per JESD22 A114V |
| ESD CDM | 2000 per JESD22 C101V |
| RoHS | Compliant |
| Lead Status | Pb Free |
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