NPN Epitaxial Silicon Transistor designed for high-fidelity audio output amplifiers and general-purpose power amplifiers. It features high current capability (Ic=15A), high power dissipation (150W), high frequency (30MHz), and high voltage (VCEO=230V). The transistor offers a wide Safe Operating Area (SOA) for reliable operation and excellent gain linearity for low Total Harmonic Distortion (THD). It is complementary to the 2SA1943/FJL4215 and thermal and electrical Spice models are available. This transistor is also available in different packages and power ratings: TO3P (2SC5242/FJA4313, 130 watts), TO220 (FJP5200, 80 watts), and TO220F (FJPF5200, 50 watts).
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Fairchild 2SC5200RTU technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-264AA |
| Pin Count | 3 |
| Number of Elements | 1 |
| Absolute Maximum Collector-Base Voltage (BVCBO) | 230V |
| Absolute Maximum Collector-Emitter Voltage (BVCEO) | 230V |
| Absolute Maximum Emitter-Base Voltage (BVEBO) | 5V |
| Absolute Maximum Collector Current (DC) | 15A |
| Absolute Maximum Base Current | 1.5A |
| Absolute Maximum Total Device Dissipation (Tc=25°C) | 150W |
| Absolute Maximum Total Device Dissipation Derating (above 25°C) | 1.04W/°C |
| Absolute Maximum Junction and Storage Temperature | -50 to +150°C |
| Thermal Resistance, Junction to Case (RθJC) | 0.83°C/W |
| Collector-Base Breakdown Voltage (BVCBO, Ic=5mA, IE=0) | 230V |
| Collector-Emitter Breakdown Voltage (BVCEO, IC=10mA, RBE=∞) | 230V |
| Emitter-Base Breakdown Voltage (BVEBO, IE=5mA, Ic=0) | 5V |
| Collector Cut-off Current (ICBO, VCB=230V, IE=0) Max | 5.0μA |
| Emitter Cut-off Current (IEBO, VEB=5V, IC=0) Max | 5.0μA |
| DC Current Gain (hFE1, VCE=5V, IC=1A) Min | 55 |
| DC Current Gain (hFE1, VCE=5V, IC=1A) Max | 160 |
| DC Current Gain (hFE2, VCE=5V, IC=7A) Min | 35 |
| DC Current Gain (hFE2, VCE=5V, IC=7A) Typ | 60 |
| Collector-Emitter Saturation Voltage (VCE(Sat), IC=8A, IB=0.8A) Typ | 0.4V |
| Collector-Emitter Saturation Voltage (VCE(Sat), IC=8A, IB=0.8A) Max | 3.0V |
| Base-Emitter On Voltage (VBE(ON), VCE=5V, IC=7A) Typ | 1.0V |
| Base-Emitter On Voltage (VBE(ON), VCE=5V, IC=7A) Max | 1.5V |
| Current Gain Bandwidth Product (fT, VCE=5V, IC=1A) Typ | 30MHz |
| Output Capacitance (Cob, VCB=10V, f=1MHz) Typ | 200pF |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
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