This device is a PNP epitaxial silicon transistor intended for switching and amplifier applications. The BC857C variant is the C gain class in the BC856/857/858/859/860 family, with DC current gain specified from 420 to 800 at VCE = -5 V and IC = -2 mA. It is rated for -45 V collector-emitter voltage, -50 V collector-base voltage, -5 V emitter-base voltage, and -100 mA continuous collector current. The transistor is supplied in a SOT-23 package with 310 mW collector dissipation and a maximum junction temperature of 150 °C. Typical transition frequency is 100 MHz and collector-base capacitance is 6 pF.
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Fairchild BC857C technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.21.00.75 |
| REACH | unknown |
| Military Spec | False |
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