N-Channel Power MOSFET featuring 300V drain-source voltage and 14A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.29 ohms. Designed with a single element and two terminals, it is housed in a TO-263 (D2PAK) package. Maximum operating temperature reaches 150°C.
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Technical Specifications
Fairchild FDB14N30TM technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263 |
| Pin Count | 2 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FDB14N30TM Datasheet
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