N-Channel Power MOSFET featuring 250V drain-source voltage and 33A continuous drain current. This silicon Metal-Oxide-Semiconductor Field-Effect Transistor offers a low on-resistance of 0.094 ohms. Designed with a single element and packaged in a TO-263AB (D2PAK-3) surface-mount package, it operates up to a maximum temperature of 150°C.
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Technical Specifications
Fairchild FDB33N25TM technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Pin Count | 2 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FDB33N25TM Datasheet
Download the complete datasheet for Fairchild FDB33N25TM to view detailed technical specifications.
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