P-channel silicon Metal-oxide Semiconductor FET for small signal applications. Features a 3A drain current (I(D)) and a 60V breakdown voltage. This single-element device is housed in a SUPERSOT-6 package with 6 terminals arranged in a dual configuration. Maximum operating temperature reaches 150°C.
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| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
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