Fairchild
FDD5612
Power Field-Effect Transistor, 18A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Technical Specifications
Fairchild FDD5612 technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-252
Pin Count
3
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.29.00.95
REACH
not_compliant
Military Spec
False
Datasheet
Fairchild FDD5612 Datasheet
Download the complete datasheet for Fairchild FDD5612 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.