N-Channel Power MOSFET featuring 30V drain-source voltage and 12A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.0125 ohms. Designed with a single element and three terminals, it is housed in a TO-252 DPAK package. Maximum operating temperature reaches 175°C.
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Technical Specifications
Fairchild FDD6690A technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-252
Pin Count
3
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.29.00.95
REACH
not_compliant
Military Spec
False
Datasheet
Fairchild FDD6690A Datasheet
Download the complete datasheet for Fairchild FDD6690A to view detailed technical specifications.
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