N-Channel Power MOSFET featuring 30V drain-source voltage and 12A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.0125 ohms. Designed with a single element and three terminals, it is housed in a TO-252 DPAK package. Maximum operating temperature reaches 175°C.
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Technical Specifications
Fairchild FDD6690A technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FDD6690A Datasheet
Download the complete datasheet for Fairchild FDD6690A to view detailed technical specifications.
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