N-Channel Power MOSFET featuring 250V drain-source voltage and 4.4A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 1.1ohm. Encased in a TO-252AA (DPAK-3) package, it provides a single element with three terminals and a maximum operating temperature of 150°C.
Quick Jump:
Technical Specifications
Fairchild FDD6N25TM technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FDD6N25TM Datasheet
Download the complete datasheet for Fairchild FDD6N25TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.