N-Channel Power MOSFET featuring 250V drain-source voltage and 4.4A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 1.1ohm. Encased in a TO-252AA (DPAK-3) package, it provides a single element with three terminals and a maximum operating temperature of 150°C.
Sign in to ask questions about the Fairchild FDD6N25TM datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Fairchild FDD6N25TM technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Fairchild FDD6N25TM to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
