N-Channel Power MOSFET featuring 200V drain-source voltage and 2.2A continuous drain current. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor offers a low on-resistance of 0.397 ohms. Designed with 8 terminals in a dual configuration, it operates up to a maximum temperature of 150°C. The component is ROHS compliant and housed in an MLP3.3X3.3 package.
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Technical Specifications
Fairchild FDMC2610 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
8
Terminal Position
DUAL
Pin Count
8
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.29.00.95
REACH
Compliant
Military Spec
False
Datasheet
Fairchild FDMC2610 Datasheet
Download the complete datasheet for Fairchild FDMC2610 to view detailed technical specifications.
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