FDMC8327L

N-Channel Power MOSFET, 12A continuous drain current (I(D)) and 40V drain-source voltage (V(DS)). Features low on-resistance of 0.0097 ohms. This single-element silicon Metal-Oxide-Semiconductor FET is housed in a MO-240BA package, measuring 3.30 x 3.30 mm, with 8 pins and 5 terminals in a dual position. Maximum operating temperature is 150°C.