FDMC86102L

N-Channel Power MOSFET, designed for high-efficiency switching applications. Features a continuous drain current of 7A and a maximum drain-source voltage of 100V. Offers a low on-resistance of 0.023 ohms, ensuring minimal power loss. This 1-element silicon device utilizes Metal-oxide Semiconductor Field-Effect Transistor technology. Encased in a compact 3.30 x 3.30 MM POWER 33 MLP package with 8 pins, it operates up to a maximum temperature of 150°C.