FDMS8090

N-Channel Power MOSFET featuring 100V drain-source voltage and 10A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.013 ohms. Designed with 8 pins and 2 elements, it operates up to a maximum temperature of 150°C. The component is housed in a 6 x 5 mm package with 4 terminals in a dual position.