N-Channel Power MOSFET featuring 60V drain-source voltage and 25A continuous drain current. Offers a low on-resistance of 0.0025 ohms. This single-element silicon device utilizes a metal-oxide semiconductor field-effect transistor structure. Packaged in MO-240AA with 8 pins and 5 terminals, it operates up to a maximum temperature of 150°C.
Fairchild FDMS86500L technical specifications.
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