
N-Channel Silicon Metal-Oxide Semiconductor FET, a single-element JFET designed for small signal applications. Features a maximum drain current of 2.2A and a breakdown voltage of 30V. Operates up to a maximum temperature of 150°C. This 3-terminal device utilizes a SUPERSOT-3 package.
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| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.21.00.95 |
| REACH | Compliant |
| Military Spec | False |
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