N-channel silicon Metal-oxide Semiconductor FET designed for small signal applications. Features a 12A drain current (I(D)) and a 60V breakdown voltage. This 8-terminal device, with a dual terminal position, offers a single element construction. Maximum operating temperature reaches 150°C.
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Fairchild FDS5672 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| Pin Count | 8 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
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