N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a continuous drain current of 6.3A and a drain-source voltage rating of 30V. Offers a low on-resistance of 0.045 ohms, minimizing power loss. This single-element device has 4 terminals with a dual terminal position and a maximum operating temperature of 150°C.
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| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Pin Count | 4 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
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