N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter voltage (V(BR)CES) and a 120A continuous collector current (I(C)). This discrete semiconductor component operates with a maximum junction temperature of 175°C and is housed in a 3-terminal TO-247AB package. Designed for single terminal position applications, it offers a robust solution for power switching.
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Technical Specifications
Fairchild FGH60N60SMD technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247AB |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FGH60N60SMD Datasheet
Download the complete datasheet for Fairchild FGH60N60SMD to view detailed technical specifications.
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