P-Channel Power MOSFET, 200V drain-source voltage, 11.5A continuous drain current, and 0.47 ohm on-resistance. Features a single silicon, metal-oxide semiconductor field-effect transistor element within a TO-263AB (D2PAK-3) package. Maximum operating temperature reaches 150°C.
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Technical Specifications
Fairchild FQB12P20TM technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Pin Count | 2 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FQB12P20TM Datasheet
Download the complete datasheet for Fairchild FQB12P20TM to view detailed technical specifications.
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