P-channel power MOSFET featuring 60V drain-source voltage and 27A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.07 ohms. Encased in a TO-263AB (D2PAK-3) package, it supports a maximum operating temperature of 175°C. The device is a single-element transistor with two terminals.
Sign in to ask questions about the Fairchild FQB27P06TM datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Fairchild FQB27P06TM technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Pin Count | 2 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Fairchild FQB27P06TM to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
