P-channel power MOSFET featuring 60V drain-source voltage and 27A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.07 ohms. Encased in a TO-263AB (D2PAK-3) package, it supports a maximum operating temperature of 175°C. The device is a single-element transistor with two terminals.
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Technical Specifications
Fairchild FQB27P06TM technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Pin Count | 2 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FQB27P06TM Datasheet
Download the complete datasheet for Fairchild FQB27P06TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.