P-channel MOSFET featuring 200V drain-source voltage and 3.7A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 1.4 ohms. Encased in a TO-252 (DPAK-3) package, it operates up to a maximum temperature of 150°C. Designed with a single element and three terminals, this component is ROHS compliant.
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Fairchild FQD5P20TM datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Fairchild FQD5P20TM technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FQD5P20TM Datasheet
Download the complete datasheet for Fairchild FQD5P20TM to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.