N-Channel Power MOSFET featuring 200V drain-source voltage and 28A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.082 ohms. Designed with a single element and three terminals, it is housed in a TO-220AB package, supporting a maximum operating temperature of 150°C.
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Technical Specifications
Fairchild FQP32N20C technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Pin Count
3
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.29.00.95
REACH
Compliant
Military Spec
False
Datasheet
Fairchild FQP32N20C Datasheet
Download the complete datasheet for Fairchild FQP32N20C to view detailed technical specifications.
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