The GBPC1210W is a SILICON bridge rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a maximum power dissipation of 83.3 milliwatts and a breakdown voltage of 1000 volts. The diode is a 4-pin device with an upper terminal position and is packaged in a GBPC-W package type. It is a discrete semiconductor component used in various electronic circuits.
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| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | UPPER |
| Pin Count | 4 |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
| Breakdown Voltage-Min | 1000 |
| Power Dissipation-Max | 83.3 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.80 |
| REACH | not_compliant |
| Military Spec | False |
