N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V collector-emitter breakdown voltage and 5.3A continuous collector current. This discrete semiconductor component offers a maximum operating temperature of 150°C and is housed in a TO-252AA package. It utilizes a single terminal position with three pins and one element.
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Technical Specifications
Fairchild HGTD1N120BNS9A technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild HGTD1N120BNS9A Datasheet
Download the complete datasheet for Fairchild HGTD1N120BNS9A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.