N-channel Insulated Gate Bipolar Transistor (IGBT) offering 600V collector-emitter breakdown voltage and 40A continuous collector current. Features a maximum operating temperature of 150°C and a 3-terminal TO-247 package. Designed with a single terminal position and one element.
Quick Jump:
Technical Specifications
Fairchild HGTG20N60B3D technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild HGTG20N60B3D Datasheet
Download the complete datasheet for Fairchild HGTG20N60B3D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.