PNP small-signal bipolar transistor for low-level, high-gain, low-noise general-purpose amplifier applications. It is rated for 50 V collector-emitter voltage, 50 V collector-base voltage, 5.0 V emitter-base voltage, and 100 mA continuous collector current. The device is supplied in a SOT-23 package and operates over a junction and storage temperature range of -55 °C to +150 °C, with 350 mW total device dissipation when mounted on FR-4. Electrical characteristics for MMBT5087 include DC current gain from 250 to 800 under stated test conditions, 40 MHz gain-bandwidth product, 4.0 pF collector-base capacitance, and 2.0 dB typical noise figure under specified conditions.
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Fairchild MMBT5087 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.21.00.95 |
| REACH | Compliant |
| Military Spec | False |
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