N-channel silicon MOSFET featuring 16A continuous drain current (I(D)) and 50V drain-source voltage. This power field-effect transistor offers a low on-resistance of 0.047 ohms. Designed with a single element and three terminals, it utilizes a TO-252AA package for efficient heat dissipation, supporting a maximum operating temperature of 175°C.
Fairchild RFD16N05SM9A technical specifications.
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