This device is a PNP epitaxial silicon bipolar power transistor intended for medium-power linear and switching applications. The TIP32C variant is rated for -100 V collector-emitter voltage, -3 A continuous collector current, and 40 W collector dissipation at case temperature of 25°C. The transistor is housed in a TO-220 package with three terminals in a base-collector-emitter pinout. Electrical characteristics in the datasheet include DC current gain of 50 minimum at -1 A, collector-emitter saturation voltage of -1.2 V maximum at -3 A, transition frequency of 3.0 MHz minimum, and operation up to 150°C junction temperature.
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| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Fairchild TIP32C to view detailed technical specifications.
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