This NPN bipolar transistor is supplied in a SOT-23 package and is listed as an active device. It is rated for 50 V collector-base voltage, 45 V collector-emitter voltage, and 5 V emitter-base voltage. The device supports up to 0.5 A collector current and 0.3 W power dissipation. The BC817-25 gain grouping specifies DC current gain from 160 to 400 at 1 V collector-emitter voltage and 100 mA collector current. Collector-emitter saturation voltage is specified to 0.7 V maximum at 500 mA collector current and 50 mA base current, and minimum transition frequency is 100 MHz.
Formosa Microsemi BC817-25 technical specifications.
| Polarity | NPN |
| Collector-Base Voltage (VCBO) | 50V |
| Collector-Emitter Voltage (VCEO) | 45V |
| Emitter-Base Voltage (VEBO) | 5V |
| Collector Current (IC) | 0.5A |
| Power Dissipation (PD) | 0.3W |
| DC Current Gain Test Voltage (VCE) | 1V |
| DC Current Gain Test Current (IC) | 100mA |
| DC Current Gain Min | 160 |
| DC Current Gain Max | 400 |
| Collector-Emitter Saturation Voltage (VCE(sat)) Max | 0.7V |
| Collector-Emitter Saturation Test Collector Current | 500mA |
| Collector-Emitter Saturation Test Base Current | 50mA |
| Transition Frequency (fT) Min | 100MHz |
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
