This device is a silicon NPN general-purpose transistor intended for medium-power amplification and switching applications. The manufacturer search result for BC847C maps to the SOT-23 BC847C-H entry with 45 V collector-emitter voltage, 50 V collector-base voltage, 6 V emitter-base voltage, 100 mA collector current, and 200 mW power dissipation. It provides DC current gain group C of 420 to 800 at VCE of 5 V and IC of 2 mA, and its transition frequency is rated at 100 MHz. The transistor family is rated MSL 1 and includes ESD capability above 4 kV HBM and above 400 V machine model.
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| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| REACH | unknown |
| Military Spec | False |
