Wideband RF Power LDMOS Transistor operating from 1.8 to 600 MHz, delivering 1250 W continuous wave (CW) output power at a 50 V supply voltage. This high-power transistor is designed for demanding RF applications requiring robust performance and efficiency. Its LDMOS technology ensures excellent linearity and gain across the specified frequency range.
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| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.75 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Freescale Semiconductor MRFE6VP61K25HR5 to view detailed technical specifications.
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