GaAs pHEMT Power FET, 3.5 GHz, 3 W , 6 V
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Freescale Semiconductor MRFG35003N6AT1 technical specifications.
| Max Operating Temperature | 85 |
| Number of Terminals | 4 |
| Terminal Position | QUAD |
| Pin Count | 4 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.29.00.75 |
| REACH | not_compliant |
| Military Spec | False |
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