Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES
Fuji Electric 1MBI100U4F-120L-50 technical specifications.
| Package/Case | M |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Height | 30mm |
| Length | 94mm |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 540W |
| Mount | Screw |
| RoHS Compliant | Yes |
| Width | 34mm |
| RoHS | Compliant |
Download the complete datasheet for Fuji Electric 1MBI100U4F-120L-50 to view detailed technical specifications.
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