The 1MBI50U4F-120L-50 is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 50A and a maximum operating temperature of 150°C. It is packaged in a flange mount configuration with dimensions of 30mm in height, 94mm in length, and 34mm in width. The device is RoHS compliant and has a maximum power dissipation of 275W.
PackageModule
MountingPanel
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Technical Specifications
Fuji Electric 1MBI50U4F-120L-50 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.2kV |
| Height | 30mm |
| Length | 94mm |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 275W |
| Mount | Panel |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Width | 34mm |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.
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