The 2MBI100N-060 is a 600V insulated gate bipolar transistor from Fuji Electric. It features a flange mount package with a screw termination and a maximum power dissipation of 400W. The device is not RoHS compliant. It has a collector emitter breakdown voltage of 600V and a collector emitter voltage of 2.8V. The IGBT also has a high isolation voltage of 2.5kV, making it suitable for high-reliability applications.
PackageM
Power400W
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Technical Specifications
Fuji Electric 2MBI100N-060 technical specifications.
General
| Package/Case | M |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 2.8V |
| Isolation Voltage | 2.5kV |
| Max Power Dissipation | 400W |
| Power Dissipation | 400W |
| RoHS Compliant | No |
| Termination | Screw |
| Weight | 0.18kg |
| Width | 92mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Fuji Electric 2MBI100N-060 Datasheet
Download the complete datasheet for Fuji Electric 2MBI100N-060 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.