Fuji Electric
2MBI100N-060
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-7
PackageM
Power400W
Quick Jump:
Technical Specifications
Fuji Electric 2MBI100N-060 technical specifications.
General
| Package/Case | M |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 2.8V |
| Isolation Voltage | 2.5kV |
| Max Power Dissipation | 400W |
| Power Dissipation | 400W |
| RoHS Compliant | No |
| Termination | Screw |
| Weight | 0.18kg |
| Width | 92mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Fuji Electric 2MBI100N-060 Datasheet
Download the complete datasheet for Fuji Electric 2MBI100N-060 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.