Fuji Electric
2MBI150N-060
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M233, 7 PIN
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M233, 7 PIN
Power600W
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Technical Specifications
Fuji Electric 2MBI150N-060 technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 2.8V |
| Isolation Voltage | 2.5kV |
| Max Power Dissipation | 600W |
| Power Dissipation | 600W |
| RoHS Compliant | No |
| Weight | 180g |
Compliance
| RoHS | Not Compliant |
Datasheet
Fuji Electric 2MBI150N-060 Datasheet
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