Power Field-Effect Transistor, 50A I(D), 500V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Max Operating Temperature | 150 |
| Number of Terminals | 8 |
| Terminal Position | UPPER |
| Number of Elements | 2 |
| REACH | unknown |
| Military Spec | False |
